A Study of Nanometer-Scaled ZnO Thin-Film Transistors Fabricated with Film Profile Engineering Method
碩士 === 國立交通大學 === 電子研究所 === 106 === In this thesis, we used a simplified film-profile-engineering (FPE) process to fabricate ZnO thin-film transistors with channel length (L) down to 50nm. For simplicity, the Si substrate used for the fabrication is employed as the bottom gate. Such a nanometer-scal...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/recn6b |