Fabrication and Characterization of Waveguided Ge Quantum Dots Phototransistor

碩士 === 國立交通大學 === 電子研究所 === 106 === In this thesis, we fabricated a heterostructure of Ge Quantum Dots/SiO2/SiGe in the channel of a MOSFET in a single oxidation step. Applying the buried oxide layer of SOI substrate and the 2-D tapered Si3N4 waveguide as the cladding and core layer for butt-couplin...

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Bibliographic Details
Main Authors: Chang,Yin-Lun, 張尹倫
Other Authors: Li, Pei-Wen
Format: Others
Language:zh-TW
Published: 2017
Online Access:http://ndltd.ncl.edu.tw/handle/4y8z22