Development of an Accelerated Step-Stress Methodology for the Evaluation of the Stability of GaN-on-Si Power MIS-HEMTs
碩士 === 國立交通大學 === 電子研究所 === 106 === By means of an accelerated step-stress methodology, the stability of GaN MIS-HEMTs was evaluated. We first studied the off-state stress condition and the reverse gate bias condition by using the constant stress measurement. Then, we utilized the step-stress measur...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/nhcnda |