Operational Speed and Reliability Considerations in Negative Capacitance FET
碩士 === 國立交通大學 === 電子研究所 === 106 === In this thesis, we investigated the operational speed and stress induced reliability issues in both the Negative Capacitance FET (NCFET) device and the ferroelectric capacitor. The tested NCFET has a floating internal gate between the ferroelectric HfZrO2 and HfO2...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/mqz58n |