Study of Tri-gate AlGaN/GaN MOS-HEMTs for Power Application
碩士 === 國立交通大學 === 照明與能源光電研究所 === 106 === For power switches, high on-off ratio, low leakage current, low subthreshold swing and low on-resistance are crucial to minimize the power losses. AlGaN/GaN HEMTs is suitable for high power application due to high breakdown voltage and high mobility provided...
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| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/crhrbk |