Fabrication and Characterization of GaN on Si HEMT Devices with Backside Si Local Etching to Reduce Leakage Current for High Power Applications

碩士 === 國立交通大學 === 光電系統研究所 === 106 === GaN on Si high electron mobility transistor (HEMT) attracts a lot of research attentions in semiconductor industry. Owing to high current, high breakdown and low fabrication cost, it becomes the most attractive high power device. Along with the increasing operat...

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Main Authors:	Yang, Li-Yng, 楊岦穎
Other Authors:	Chang, Edward-Yi
Format:	Others
Language:	en_US
Published:	2018
Online Access:	http://ndltd.ncl.edu.tw/handle/gxvqk9

id	ndltd-TW-106NCTU5123016
record_format	oai_dc
spelling	ndltd-TW-106NCTU51230162019-05-16T00:22:51Z http://ndltd.ncl.edu.tw/handle/gxvqk9 Fabrication and Characterization of GaN on Si HEMT Devices with Backside Si Local Etching to Reduce Leakage Current for High Power Applications 利用背向矽基板蝕刻改善高功率氮化鎵元件漏電流之製造與特性研究 Yang, Li-Yng 楊岦穎碩士國立交通大學光電系統研究所 106 GaN on Si high electron mobility transistor (HEMT) attracts a lot of research attentions in semiconductor industry. Owing to high current, high breakdown and low fabrication cost, it becomes the most attractive high power device. Along with the increasing operating voltage, the limitation of Si substrate becomes a crucial issue for GaN HEMT devices. In this thesis, the Si local removal was adopted to improve the device breakdown voltage, the leakage current and the standard process has been established. Besides, two kinds of devices were designed, the long-distance Si removal (LDSR) device and the short-distance Si removal (SDSR) device, to evaluate the influence of the etched area under the devices. Such a device structure exhibited high breakdown voltage, low leakage current and buffer/substrate trapping caused by the GaN/Si lattice mismatch in comparison with conventional GaN on Si HEMT. The results demonstrated that the Si substrate removal technique effectively eliminate the leakage path between the buffer/substrate interface. In order to overcome the heat issue, the AlN/Cu heat dissipation layer was deposited under active region. The current densities were improved in both kinds of devices which demonstrate that the AlN/Cu layer is beneficial to suppress the devices self-heating effect and shows the feasibility to power devices. Chang, Edward-Yi Maa, Jer-shen 張翼馬哲申 2018 學位論文 ; thesis 57 en_US
collection	NDLTD
language	en_US
format	Others
sources	NDLTD
description	碩士 === 國立交通大學 === 光電系統研究所 === 106 === GaN on Si high electron mobility transistor (HEMT) attracts a lot of research attentions in semiconductor industry. Owing to high current, high breakdown and low fabrication cost, it becomes the most attractive high power device. Along with the increasing operating voltage, the limitation of Si substrate becomes a crucial issue for GaN HEMT devices. In this thesis, the Si local removal was adopted to improve the device breakdown voltage, the leakage current and the standard process has been established. Besides, two kinds of devices were designed, the long-distance Si removal (LDSR) device and the short-distance Si removal (SDSR) device, to evaluate the influence of the etched area under the devices. Such a device structure exhibited high breakdown voltage, low leakage current and buffer/substrate trapping caused by the GaN/Si lattice mismatch in comparison with conventional GaN on Si HEMT. The results demonstrated that the Si substrate removal technique effectively eliminate the leakage path between the buffer/substrate interface. In order to overcome the heat issue, the AlN/Cu heat dissipation layer was deposited under active region. The current densities were improved in both kinds of devices which demonstrate that the AlN/Cu layer is beneficial to suppress the devices self-heating effect and shows the feasibility to power devices.
author2	Chang, Edward-Yi
author_facet	Chang, Edward-Yi Yang, Li-Yng 楊岦穎
author	Yang, Li-Yng 楊岦穎
spellingShingle	Yang, Li-Yng 楊岦穎 Fabrication and Characterization of GaN on Si HEMT Devices with Backside Si Local Etching to Reduce Leakage Current for High Power Applications
author_sort	Yang, Li-Yng
title	Fabrication and Characterization of GaN on Si HEMT Devices with Backside Si Local Etching to Reduce Leakage Current for High Power Applications
title_short	Fabrication and Characterization of GaN on Si HEMT Devices with Backside Si Local Etching to Reduce Leakage Current for High Power Applications
title_full	Fabrication and Characterization of GaN on Si HEMT Devices with Backside Si Local Etching to Reduce Leakage Current for High Power Applications
title_fullStr	Fabrication and Characterization of GaN on Si HEMT Devices with Backside Si Local Etching to Reduce Leakage Current for High Power Applications
title_full_unstemmed	Fabrication and Characterization of GaN on Si HEMT Devices with Backside Si Local Etching to Reduce Leakage Current for High Power Applications
title_sort	fabrication and characterization of gan on si hemt devices with backside si local etching to reduce leakage current for high power applications
publishDate	2018
url	http://ndltd.ncl.edu.tw/handle/gxvqk9
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Fabrication and Characterization of GaN on Si HEMT Devices with Backside Si Local Etching to Reduce Leakage Current for High Power Applications

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