Fabrication and Characterization of GaN on Si HEMT Devices with Backside Si Local Etching to Reduce Leakage Current for High Power Applications
碩士 === 國立交通大學 === 光電系統研究所 === 106 === GaN on Si high electron mobility transistor (HEMT) attracts a lot of research attentions in semiconductor industry. Owing to high current, high breakdown and low fabrication cost, it becomes the most attractive high power device. Along with the increasing operat...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/gxvqk9 |