Enhance the Strength of Semiconductor Wafers by Design of Experiments and Response Surface Methodology

• Main Authors: Su,Wei-Yen, 蘇煒儼
• Other Authors: Tong, Lee-Ing
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/x29yj8

碩士 === 國立交通大學 === 管理學院工業工程與管理學程 === 106 === The main purpose of this research is to use the experimental design method to improve the wafer quality characteristics. Since the design direction of electronic products is based on the four requirements of light, thin, short and small. To achieve this goal, the packaged wafer must be ground to 100 micrometers (μm), and even some wafers will need to be ground to 25 micrometers (μm) before wafer packaging. Laser cutting of wafers turns from early wheel cutting to stealth cutting. In the current thin products of silicon and sapphire wafers, it is prone to produce dark cracking and micro cracking of wafers, resulting in poor wafer strength and poor yield of wafer leakage. Therefore, wafer strength and wafer leakage become the yield of wafer fabs and packaging plants. The key to the level is high and low. In this study, 3-point bending test and ROR (Ring on Ring) test method were used to identify and enhance the wafer strength capability and the electrical test chip leakage value. The verification experiment was performed by using the best factor level combination. After confirming the improved wafer strength and leakage value, the best parameters obtained in this study can effectively enhance the wafer strength and reduce the leakage of wafers, thereby increasing the wafer factory and packaging plant's yield