An Investigation of Electron Transport in Zinc-Tin oxide Thin Film Transistor and its Application to Charge-Trapping Memory
博士 === 國立成功大學 === 材料科學及工程學系 === 106 === In this study, zinc-tin oxide (ZTO) was prepared by solution method as the active layer for thin film transistor (TFT). The microscopic electron conduction mechanism in the ultra-thin active layer and the causes of the gate-leakage current were discussed. Fina...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49n3af |