Resistive Change Properties of Cubic-YSZ Dielectrics with Different Microstructure in RRAM Devices
碩士 === 明志科技大學 === 材料工程系碩士班 === 106 === A series of yttria-stabilized-zirconia (YSZ)-based resistive random access memory (RRAM) with characteristically different YSZ microstructures are investigated. The RRAM consists of a Mo bottom electrode (300 nm), a YSZ dielectric film (30 nm) and an Al top ele...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/5yxm57 |