Improve DRAM leakage using Theory of Inventive Problem Solving (TRIZ) method
碩士 === 明志科技大學 === 工業工程與管理系碩士班 === 106 === Buried field - effect transistor is popularly used for modern DRAM design because of its superiorities in drain-induced barrier lowering (DIBL), sub-threshold slop and junction leakage. However, gate induced drain leakage (GIDL) is enhanced by large source-d...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/p59ttb |