Growth and Characterization of GaN Eplilayers Using MOCVD Reactor
碩士 === 明新科技大學 === 化學工程與材料科技系碩士在職專班 === 107 === In this study, MOCVD reactor system was used to grow GaN thin films on SiN substrate. The electrical and structural characteristics of these samples were investigated by Hall, X-ray diffraction (XRD), field emission electron microscope (SEM), and at...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/xrhdk9 |