Nitride Based Materials and Application of Optoelectronic Devices
碩士 === 長庚大學 === 電子工程學系 === 106 === In this thesis, we presented AlGaN/GaN high-electron mobility transistors (HEMTs), with multi-mesa-channel (MMC) structure to achieve normally off HEMT. The multi-mesa-channels fabricated with different values of mesa channel width ranging from 100 nm ~ 500 nm whil...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/fvemsd |