Study on Resistive Switching Characteristics of ZnSnO Thin Films
碩士 === 國立雲林科技大學 === 電子工程系 === 105 === In this study, the Al-doped zinc tin oxide (Al-ZTO) and zinc tin oxide (ZTO) resistive random access memories (ReRAMs) were fabricated by a simple, fast, low cost, and low temperature solution-process. This thesis was divided into three parts. First, indium...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/qhn36x |