Study on the Structural Characteristics of SiC Using Low Temperature Diffusion Bonding
碩士 === 國立臺北科技大學 === 製造科技研究所 === 105 === The main purpose of this study was to investigate multiple physical processes such as metallization techniques for SiC surface and diffusion bonding between SiC ceramics. SiC/SiC joints was carried out at 500°C to 700°C with a thin interlayer of Ti-La for use...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/946ufk |