Investigating Hole Injection Layer of GaN-Based Blue Light Emitting Diode with Various Mg Doped Concentration
碩士 === 南臺科技大學 === 電子工程系 === 105 === In this research, we propose various p-type doped concentrations of “Hole Injection Layer” between multiple quantum well (MQW) and electron blocking layer (EBL) to improve holes injection rate and efficiency droop at high operation current of GaN-based blue l...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/37223552645458599390 |