A Study of Sub-1-nm EOT and High Performance HfO2-based Gate Stacks on Germanium MOSFETs
碩士 === 國立聯合大學 === 電子工程學系碩士班 === 105 === In the thesis, we focused on the influence of high-k HfO2 for Ge MOSFETs, and the related experiments that were discussed in following five chapters. Chapter I includes the introduction and motivation for thesis. Chapter II is the study of varying the lo...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00833455736248557514 |