The Study of Device Performance and Reliability for Multi-Fin p-Channel Tri-Gate FinFET

碩士 === 國立高雄大學 === 電機工程學系碩博士班 === 105 === With the dimension of MOSFET gradually scaling down, 3D structure of Fin Field Effect Transistor (FinFET) is going to be developed as the evolution of traditional planar structure of FinFET. Comparing with planar structure, 3D FinFET is much better to control...

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Bibliographic Details
Main Authors: DAI, AN-NI, 戴安妮
Other Authors: YEH, WEN-KUAN
Format: Others
Language:zh-TW
Published: 2017
Online Access:http://ndltd.ncl.edu.tw/handle/zyhj65