Processing and Property Characterization of Donor-Acceptor Co-substituted Gallium Nitride Films Prepared by Reactive Sputtering
碩士 === 國立臺灣科技大學 === 材料科學與工程系 === 105 === In this research, we successfully deposited donor-acceptor co-substituted ZnSnGaN films by radio-frequency reactive sputtering technique with single cermet targets in an Ar/N2 atmosphere. ZnxSn0.04GaN (x= 0, 0.03, 0.06 and 0.09) films were deposited on Si (10...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31257145966964154173 |