| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 105 === The ideal characteristics of power device are low on-resistance and high blocking voltage. For a high blocking voltage, the conventional power MOSFET has an unacceptably high on-resistance. The problem of on-resistance is solved by the IGBT structure, but there are four alternative semiconductors in IGBT structure, which can procure latch-up phenomenon. It is found that the TFET structure can improve this condition. Because there are only three alternative semiconductors (p-n-p) in the TFET-IGBT structure, the device can alleviate latch-up. In order to improve the on-current of TFET-IGBT, the narrow bandgap material, SiGe, has been used as channel layer, which can cause a low on-state voltage drop without latch-up problem. In addition, devices with various active region width and trench depth will be discussed
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