Study of power TFET-IGBT with SiGe channel layer
碩士 === 國立臺灣科技大學 === 電子工程系 === 105 === The ideal characteristics of power device are low on-resistance and high blocking voltage. For a high blocking voltage, the conventional power MOSFET has an unacceptably high on-resistance. The problem of on-resistance is solved by the IGBT structure, but there...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/363z44 |