Surface passivation of c-Si wafers using a-Si:H layers prepared in large-area radio frequency plasma enhanced chemical vapor deposition system
碩士 === 國立臺灣科技大學 === 化學工程系 === 105 === Hydrogenated amorphous Si (a-Si:H) thin films were deposited on single crystal Si (c-Si) wafers to form a-Si:H/c-Si heterojuction structure in large-area(20×20 cm2) radio-frequency plasma-enhanced chemical vapor deposition (large-area RF-PECVD) system. Emphasis...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/79gs73 |