Improvement of Amorphous Indium-Gallium-Zinc Oxide TFT using Double-Stacked Active Layer
碩士 === 國立臺灣科技大學 === 光電工程研究所 === 105 === Amorphous oxide semiconductors (AOSs) represented by amorphous indium-gallium-zinc oxide (a-IGZO) are considered to be the most competitive materials in display industry for its great uniformity over large size display, low fabrication temperature and low prod...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54tr2p |