Influence of AlN Layer Thickness on Passivation Effect for N-type Silicon Substrate
碩士 === 國立臺灣科技大學 === 光電工程研究所 === 105 === There are two parts in the study. First, deposit the AlN layers in different N 2 flow rate and analyzing the leakage current density between grain size and N2 flow rate. Second, analyzing the effective fixed charge (Qeff ), insulator layers trap charge densit...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58581133955213762331 |