Investigation of Ta2O5-Based Resistive Random Access Memory with multilayer h-BN

• Main Authors: Chun-Liang Jheng, 鄭淳良
• Other Authors: Si-Chen Lee
• Format: Others
• Language: en_US
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/4hyxmp

碩士 === 國立臺灣大學 === 電子工程學研究所 === 105 === Resistive random access memory (RRAM), is one of the promising emerging memory technologies to meet the challenges of developing the next-generation high performance semiconductor memory. Among many material combinations, tantalum oxide is selected as the switching memory layer, and we investigate the memory switching characteristics by controlling the fabrication processes condition and changing the top electrode material. As the following, to improve the device performance in power consumption, h-BN layer is applied to reduce the leakage current path and improve the operation power during the switching operation. And the I-V characteristics and the memory switching model of the device structure (Ta/h-BN/Ta2O5/Pt) are reveled. Under the device structure with h-BN, the write voltage and the operation current are significant decrease and the power consumption is reduced almost 98%. Furthermore, the endurance is increased almost 100%. In this thesis, the electrical characteristics of the Ta2O5 based RRAM with h-BN is studied, and revealing that it has the promising memory characteristics and the potential for the further researches.