Investigation of Ta2O5-Based Resistive Random Access Memory with multilayer h-BN
碩士 === 國立臺灣大學 === 電子工程學研究所 === 105 === Resistive random access memory (RRAM), is one of the promising emerging memory technologies to meet the challenges of developing the next-generation high performance semiconductor memory. Among many material combinations, tantalum oxide is selected as the switc...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4hyxmp |