Electrical characteristics of GeSn p-i-n structure

• Main Authors: Chi-Ling Shen, 沈志領
• Other Authors: Hung-Hsiang Cheng
• Format: Others
• Language: en_US
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/k9pe5r

碩士 === 國立臺灣大學 === 電子工程學研究所 === 105 === In recent years, GeSn-based p-i-n diodes have attracted great research attention on group IV opto-electronics such as photodetectors and emitters operated at near infrared wavelengths. Lots of efforts have been done to obtain the photo-electronic properties such as light absorption or emission. However, to further understand the electrical characteristics is needed. For optical receivers the critical photodiode parameters are dark current, responsivity, and bandwidth. In this paper, we will focus on dark current which may increase the power consumption and degrade the signal-to-noise-ratio (SNR) of the integrated optical receivers. However, for a practical GeSn-based diode, the I-V analysis is complicated, for example, the potential barriers at the hetero-interface as well as at the metal/semiconductor contact. Therefore, deeper investigation on the carrier transport and behaviors is needed. In this paper, we will report on two different GeSn-based p-i-n diodes, N924 and N935, which fabricated by MBE, then briefly analysis the result of electrical characteristics from our measurements.