Electrical characteristics of GeSn p-i-n structure
碩士 === 國立臺灣大學 === 電子工程學研究所 === 105 === In recent years, GeSn-based p-i-n diodes have attracted great research attention on group IV opto-electronics such as photodetectors and emitters operated at near infrared wavelengths. Lots of efforts have been done to obtain the photo-electronic properties suc...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/k9pe5r |