Development of the GaN-based Optoelectronic and Electronic Devices with Embedded Periodic Structures
博士 === 國立臺灣大學 === 電子工程學研究所 === 105 === GaN-based materials have drawn much attention for application to optoelectronic devices owing to their nature of wide bandgap. GaN has wide bandgap of 3.4eV, which provides special properties for applications in light-emitting diode (LED) and high-electron-mobi...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/11453279800855728124 |