GeSn Metal-insulator-semiconductor Light-emitting Devices and GeSn Junctionless Gate-all-around pFETs
碩士 === 國立臺灣大學 === 光電工程學研究所 === 105 === In this thesis, We focus on epitaxy technique, material analysis, and epitaxy quality on the promising materials GeSn. Besides, the optoelectronic MIS tunneling diodes and Junctionless GAA pFETs are fabricated. Ge semiconductors have been widely used in optoel...
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| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/w9v2ac |