Application of SiGeO tunneling layer on Operation Characteristics of Nanowire Charge-Trapping Flash Memory Devices
碩士 === 國立清華大學 === 工程與系統科學系 === 105 === 3D flash technology is becoming more important, because the scaling down planar device faces challenge. In addition to high storage density, flash device with good electrical characteristic and reliability are required. In recent years, buried channel such as S...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/udn96v |