A Study of the Fabrication and Characteristics of a Silicon Detector for Energy Dispersive X-ray Spectrometer

碩士 === 國立清華大學 === 工程與系統科學系 === 105 === This research is aim to fabricate high energy resolution N-JFET silicon drift detector used in energy dispersive x-ray spectrometer to detect characteristic X-ray of material for composition information of selected region of material. N-JFET silicon drift detec...

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Bibliographic Details
Main Authors: Ma,Yu Chao, 馬裕超
Other Authors: Chen,Fu Rong
Format: Others
Language:zh-TW
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/bu975g