Selective Area Growth of GaN Nanowire Array Embedded with Ga(In)N Quantum Boxes on Si(111) Substrates Using Molecular Beam Epitaxy
博士 === 國立清華大學 === 電子工程研究所 === 105 === In this study, the selective area growth (SAG) of high-density (2.5×109 cm-2) GaN nanowires (NWs) embedded with Ga(In)N quantum boxes (QBs) on Si(111) substrate by plasma-assisted molecular beam epitaxy are demonstrated. At first, substrates with various masking...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4jkdvv |