Investigation of Growth of III-Nitride Alloys by Plasma-Assisted Molecular Beam Epitaxy
博士 === 國立清華大學 === 電子工程研究所 === 105 === Over the past two decades, III-nitride materials system boasts outstanding properties of optoelectronic devices and high-power devices. However, many of these applications are currently unavailable using current III-nitride thin film growth techniques, including...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2016
|
Online Access: | http://ndltd.ncl.edu.tw/handle/mzzfkv |