Investigation of Growth of III-Nitride Alloys by Plasma-Assisted Molecular Beam Epitaxy

博士 === 國立清華大學 === 電子工程研究所 === 105 === Over the past two decades, III-nitride materials system boasts outstanding properties of optoelectronic devices and high-power devices. However, many of these applications are currently unavailable using current III-nitride thin film growth techniques, including...

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Bibliographic Details
Main Authors: Yang. Wei Chen, 楊偉臣
Other Authors: Cheng. Keh Yung
Format: Others
Language:en_US
Published: 2016
Online Access:http://ndltd.ncl.edu.tw/handle/mzzfkv