The study on optoelectronic properties of GaSe/InSe heterostructure
碩士 === 國立中山大學 === 物理學系研究所 === 105 === 2D materials with a wealth of exotic dimensional-dependent properties are promising candidates for next-generation ultrathin and flexible optoelectronic devices. Indium selenide (InSe) and gallium selenide (GaSe), belonging to group-III monochalcogenides, are in...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/398g55 |