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碩士 === 國立中央大學 === 電機工程學系 === 105 === A novel type of top-illuminated, etch-mesa In0.52Al0.48As-based avalanche photodiode (APD) with high-speed (>25 Gbit/sec), low dark current performance has been demonstrated. The 25G APD device is composed of n-side down design with the In0.52Al0.48As multipl...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/e4r7er |