Investigation of Transparent CeO2/ZnO Bi-Layer RRAM
碩士 === 國立交通大學 === 電機資訊國際學程 === 105 === In recent times the concept of resistance based switching devices have drawn considerable amount of attention as the next non-volatile memory. The advantages it of Resistive Random Access memory is believed to be on fast operation, high density, small size , l...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/7498y8 |