Program/Erase Characteristics Affected by Hydrogen Concentration during Annealing in NAND Flash Memory

• Main Authors: Lin, Chen-Han, 林承翰
• Other Authors: Riichiro, Shirota
• Format: Others
• Language: en_US
• Published: 2016
• Online Access: http://ndltd.ncl.edu.tw/handle/82128878055304555558

碩士 === 國立交通大學 === 電信工程研究所 === 105 === In this thesis, we investigate threshold voltage characteristic for different concentration of hydrogen during annealing in the process of NAND flash memory device. Hydrogen during annealing could reduce the dangling bonds that remain at silicon and silicon-oxide interface. However, our measurement shows that higher concentration of hydrogen during annealing treatments have wider threshold voltage distribution compare to lower one. Through the measurement with different conditions, we statistics concern the electron injection behavior and assume that there are positive charges remain in the shallow trench isolation which amplify the electric field at the edge of tunnel oxide with fringing effect. In this work, we provide a statistics way of abnormal electron injection that are caused by device shrinking.