Program/Erase Characteristics Affected by Hydrogen Concentration during Annealing in NAND Flash Memory
碩士 === 國立交通大學 === 電信工程研究所 === 105 === In this thesis, we investigate threshold voltage characteristic for different concentration of hydrogen during annealing in the process of NAND flash memory device. Hydrogen during annealing could reduce the dangling bonds that remain at silicon and silicon-oxid...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2016
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/82128878055304555558 |