Bottom-up Growth and the Electrical Property of Si Nanowires
碩士 === 國立交通大學 === 電子物理系所 === 105 === In our research, we use the metal-catalyst growth method to grow Si nanowires on Si substrate in ultra-high vacuum chemical vapor deposition (UHV-CVD). We investigate the influence of different growth parameters on morphology and growth rate of Si nanowires in UH...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/w592ez |