Control of the electrical properties of AlxGa1-xN/GaN heterostructure by varying the interfacial epitaxy
碩士 === 國立交通大學 === 電子物理系所 === 105 === In this thesis, GaN thin films, AlxGa1-xN thin films and AlxGa1-xN/GaN two dimensional electron gas (2DEG) structures were grown by molecular beam epitaxy (MBE). Surface morphology and optical properties of GaN thin films were observed to study the effect of diff...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6qyx98 |