The Photo Capacitance Simulation of GaAsN/GaAs Quantum Well under Illumination
碩士 === 國立交通大學 === 電子物理系所 === 105 === In this study, we introduce photovoltaic effect first, we found that measured capacitance would increase and form a plat form after we illuminate GaAsN/GaAs quantum well schottky diode sample. Photovoltaic effect had been researched by the other study. The electr...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/hkke3j |