| Summary: | 碩士 === 國立交通大學 === 電子物理系所 === 105 === In this work, we focus on the frequency- resolved admittance spectroscopy of InAs/InGaAs dot-in-well layer embedded in a GaAs Schottky diode where the reverse bias is used to discharge the initially occupied energy levels. In the first part, the empirical results show the differences between capacitance versus frequency logarithm, and conductance versus frequency logarithm. To understand the cause of the correspondence between C and G influenced by quantum dots under large reverse bias and low frequency, we demonstrate an analytical expression for admittance. Consider two models: the first one, Schottky diode with defects; the second one contains quantum dots layer within. Derive the admittance of both cases by solving the electrical field and potential energy of the depletion region under small signal. Furthermore, analyze the simulated admittance spectroscopy of both models to verify the contribution of quantum dots.
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