Frequency Resolved Admittance Spectroscopy Analysis and Simulation on InAs Quantum Dots Shottky Diode
碩士 === 國立交通大學 === 電子物理系所 === 105 === In this work, we focus on the frequency- resolved admittance spectroscopy of InAs/InGaAs dot-in-well layer embedded in a GaAs Schottky diode where the reverse bias is used to discharge the initially occupied energy levels. In the first part, the empirical results...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86shgp |