Electrical properties and memory effects in self-oxidized MoOx/MoS2 transistor
碩士 === 國立交通大學 === 電子物理系所 === 105 === Mechanically exfoliated molybdenum disulfide (MoS2) flakes are dispersed on silicon substrates capped with a 300-nm thick silicon dioxide layer. The standard electron beam lithography and thermal evaporation were used to pattern Au leads on the MoS2 flakes. The a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6bfew8 |