The Study of AP-PECVD Fabricated Amorphous InGaZnO Thin Film Transistors with Microwave Annealing Treatment

• Main Authors: Chen, Hsin-Ying, 陳信穎
• Other Authors: Chang, Kow-Ming
• Format: Others
• Language: en_US
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/3d3293

碩士 === 國立交通大學 === 電子研究所 === 105 === The conventional thin film transistors commonly are high operation voltage, high threshold voltage, poor subthreshold swing, high processes temperature, and lower field-effect mobility. Obviously, the conventional thin film transistors are not satisfied with the technology of display with high resolution, high field-effect mobility and low processes temperature etc. nowadays. However, high resolution, high frame rate and large size display are the trend of 3D display in the future and amorphous indium gallium zinc oxide (a-IGZO) has a great potentialities amount numerous materials to be thin film transistors (TFTs) with high field-effect mobility and good uniformity which possess high carriers mobility, high transparency and low processes temperature compared with amorphous silicon thin film transistors (a-Si:H TFTs). Furthermore, the process steps of a-IGZO TFTs are more simple than low temperature poly crystalline silicon thin film transistors (LTPS TFTs) and the uniformity of a-IGZO TFTs are better than LTPS TFTs. VI In this investigation, a-IGZO channel layer is fabricated by atmospheric-pressure PECVD (AP-PECVD) in atmosphere without vacuum system so that we could not only save a lot of cost to maintain it also apply to large area manufacturing and then it is treated by microwave annealing (MWA) to boost the performance of a-IGZO TFT. Moreover, MWA is not only a directly thermal convention but also a rapid thermal process so it could be claimed low thermal budget and rapid process to be compatible with low temperature process. Finally, we successfully fabricated a-IGZO TFT by AP-PECVD to deposit IGZO channel and annealing active layer by microwave. It reveals that lower off current improvement and better on/off current ratio are obtained from the case with 600W of microwave power for 100s and it has low off current of 1.3×10-13 A and better Ion/Ioff of 1.37×107. It exhibited highest mobility of 7.66cm2/V·s and smallest subthreshold swing of 200mV/decade under MWA 2P 100s. Obviously, amorphous InGaZnO thin film transistors fabricated by AP-PECVD have significantly improvement by microwave annealing treatment.