The Study of AP-PECVD Fabricated Amorphous InGaZnO Thin Film Transistors with Microwave Annealing Treatment
碩士 === 國立交通大學 === 電子研究所 === 105 === The conventional thin film transistors commonly are high operation voltage, high threshold voltage, poor subthreshold swing, high processes temperature, and lower field-effect mobility. Obviously, the conventional thin film transistors are not satisfied with the t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3d3293 |