| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 105 === The conventional thin film transistors commonly are high operation voltage, high
threshold voltage, poor subthreshold swing, high processes temperature, and lower
field-effect mobility. Obviously, the conventional thin film transistors are not satisfied
with the technology of display with high resolution, high field-effect mobility and low
processes temperature etc. nowadays. However, high resolution, high frame rate and
large size display are the trend of 3D display in the future and amorphous indium
gallium zinc oxide (a-IGZO) has a great potentialities amount numerous materials to
be thin film transistors (TFTs) with high field-effect mobility and good uniformity
which possess high carriers mobility, high transparency and low processes temperature
compared with amorphous silicon thin film transistors (a-Si:H TFTs). Furthermore, the
process steps of a-IGZO TFTs are more simple than low temperature poly crystalline
silicon thin film transistors (LTPS TFTs) and the uniformity of a-IGZO TFTs are better
than LTPS TFTs.
VI
In this investigation, a-IGZO channel layer is fabricated by atmospheric-pressure
PECVD (AP-PECVD) in atmosphere without vacuum system so that we could not only
save a lot of cost to maintain it also apply to large area manufacturing and then it is
treated by microwave annealing (MWA) to boost the performance of a-IGZO TFT.
Moreover, MWA is not only a directly thermal convention but also a rapid thermal
process so it could be claimed low thermal budget and rapid process to be compatible
with low temperature process.
Finally, we successfully fabricated a-IGZO TFT by AP-PECVD to deposit IGZO
channel and annealing active layer by microwave. It reveals that lower off current
improvement and better on/off current ratio are obtained from the case with 600W of
microwave power for 100s and it has low off current of 1.3×10-13 A and better Ion/Ioff
of 1.37×107. It exhibited highest mobility of 7.66cm2/V·s and smallest subthreshold
swing of 200mV/decade under MWA 2P 100s. Obviously, amorphous InGaZnO thin
film transistors fabricated by AP-PECVD have significantly improvement by
microwave annealing treatment.
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