Modeling the Statistical Variability of Process and Random Telegraph Signals Induced Threshold Voltage Shifts in Nanoscale MOSFETs and FinFETs
碩士 === 國立交通大學 === 電子研究所 === 105 === The trapping and de-trapping of a single electron at the Si-SiO2 interface of planar bulk metal -oxide-semiconductor field effect transistors (MOSFETs) and fin-shape field effect transistors (FinFETs), which is called random telegraph signals (RTSs), has been a we...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2016
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33925910257458133100 |